A stable-n-channel indium phosphide field-effect transistor with an amorphous hydrogenated silicon gate
Identifieur interne : 025568 ( Main/Repository ); précédent : 025567; suivant : 025569A stable-n-channel indium phosphide field-effect transistor with an amorphous hydrogenated silicon gate
Auteurs : RBID : Pascal:91-0371249Descripteurs français
- Pascal (Inist)
English descriptors
Abstract
InP field-effect transistors (FETs) with an amorphous hydrogenated Si (α-Si:H) gate resulted in metal-insulator-like FET characteristics with no observable current drift and a transconductance of 30-38mS/mm
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 023F56
Links to Exploration step
Pascal:91-0371249Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A stable-n-channel indium phosphide field-effect transistor with an amorphous hydrogenated silicon gate</title><author><name sortKey="Roditi, E" uniqKey="Roditi E">E. Roditi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Foundation Res. technology</s1><s2>Heraklio Crète</s2><s3>CRI</s3><sZ>A11011000</sZ></inist:fA14><country>Costa Rica</country><wicri:noRegion>Foundation Res. technology</wicri:noRegion></affiliation></author><author><name sortKey="Iliadis, A A" uniqKey="Iliadis A">A. A. Iliadis</name></author><author><name sortKey="Christou, A" uniqKey="Christou A">A. Christou</name></author></titleStmt><publicationStmt><idno type="inist">91-0371249</idno><date when="1989">1989</date><idno type="stanalyst">PASCAL 91-0371249 INIST</idno><idno type="RBID">Pascal:91-0371249</idno><idno type="wicri:Area/Main/Corpus">023F56</idno><idno type="wicri:Area/Main/Repository">025568</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. Phys. Lett.</title><title level="j" type="main">Applied Physics Letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous state</term><term>Field effect transistor</term><term>Indium Phosphides</term><term>Silicon</term><term>Transistor gate</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Transistor effet champ</term><term>Grille transistor</term><term>Etat amorphe</term><term>Silicium</term><term>Indium Phosphure</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">InP field-effect transistors (FETs) with an amorphous hydrogenated Si (α-Si:H) gate resulted in metal-insulator-like FET characteristics with no observable current drift and a transconductance of 30-38mS/mm</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. Phys. Lett.</s0></fA03><fA05><s2>55</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A stable-n-channel indium phosphide field-effect transistor with an amorphous hydrogenated silicon gate</s1></fA08><fA11 i1="01" i2="1"><s1>RODITI (E.)</s1></fA11><fA11 i1="02" i2="1"><s1>ILIADIS (A. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHRISTOU (A.)</s1></fA11><fA14 i1="01"><s1>Foundation Res. technology</s1><s2>Heraklio Crète</s2><s3>CRI</s3><sZ>A11011000</sZ></fA14><fA20><s1>999-1001</s1></fA20><fA21><s1>1989</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>CNRS</s1><s2>10020</s2></fA43><fA44><s0>0000</s0></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>91-0371249</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied Physics Letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>InP field-effect transistors (FETs) with an amorphous hydrogenated Si (α-Si:H) gate resulted in metal-insulator-like FET characteristics with no observable current drift and a transconductance of 30-38mS/mm</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Transistor effet champ</s0></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Grille transistor</s0></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Etat amorphe</s0></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Silicium</s0></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Indium Phosphure</s0></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Field effect transistor</s0></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Transistor gate</s0></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Amorphous state</s0></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Silicon</s0></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Indium Phosphides</s0></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Transistor efecto campo</s0></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Rejilla transistor</s0></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Estado amorfo</s0></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Silicio</s0></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Indio</s0></fC03><fN21><s1>939</s1></fN21><fN82><s1>NBS</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 025568 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 025568 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:91-0371249
|texte= A stable-n-channel indium phosphide field-effect transistor with an amorphous hydrogenated silicon gate
}}
| This area was generated with Dilib version V0.5.77. |  |